Drain to Source Resistance 9mOhm
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14A
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Ta 44A Tc
Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 9mOhm @ 20A, 10V
Turn On Delay Time 8.3 ns
Element Configuration Single
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.2W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 3 (168 Hours)