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IRFH8334TR2PBF

Infineon Technologies
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 12A 5X6 PQFN
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Buying Options
Total Price: USD $3.56
Unit Price: USD $3.5625
≥1 USD $3.5625
≥10 USD $2.92315
≥100 USD $2.83195
≥500 USD $2.74075
≥1000 USD $2.6486
Inventory: 1116
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 5mm
Length 5.85mm
Height 1.17mm

Technical

Nominal Vgs 1.8 V
Rds On Max 9 mΩ
Drain to Source Resistance 9mOhm
Recovery Time 20 ns
Input Capacitance 1.18nF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.8V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 7 ns
Fall Time (Typ) 4.6 ns
Drain to Source Voltage (Vdss) 30V
Rise Time 14ns
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Ta 44A Tc
Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 9mOhm @ 20A, 10V
FET Type N-Channel
Turn On Delay Time 8.3 ns
Power Dissipation 3.2W
Element Configuration Single
Number of Elements 1
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.2W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Resistance 9MOhm
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Series HEXFET?
Published 2013
Packaging Cut Tape (CT)

Physical

Supplier Device Package PQFN (5x6)
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount

Alternative Model

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