Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Drain to Source Resistance 6.6mOhm
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 6.6mOhm @ 20A, 10V
Turn On Delay Time 9.2 ns
Element Configuration Single
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.3W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 3 (168 Hours)