IRFH8324TR2PBF
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 18A 5X6 PQFN
PDF
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Buying Options
Total Price: USD $0.59
Unit Price: USD $0.5896
≥1 USD $0.5896
≥10 USD $0.48048
Inventory: 107
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Supplier Device Package PQFN (5x6)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.1MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 3.6W Ta 54W Tc
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2380pF @ 10V
Current - Continuous Drain (Id) @ 25°C 23A Ta 90A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 26ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 23A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.38nF
Recovery Time 24 ns
Drain to Source Resistance 4.1mOhm
Rds On Max 4.1 mΩ
Nominal Vgs 1.8 V
Dimensions
Height 1.17mm
Length 5.85mm
Width 5mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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