Drain to Source Breakdown Voltage 25V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 47A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 7174pF @ 13V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Rds On (Max) @ Id, Vgs 1.05m Ω @ 50A, 10V
Power Dissipation-Max 3.6W Ta 160W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HEXFET?, StrongIRFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ