IRFH7921TR2PBF
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 15A PQFN56
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5mm
Length 6mm
Height 950μm
Technical
Nominal Vgs 1.8 V
Rds On Max 8.5 mΩ
Drain to Source Resistance 8.5mOhm
Recovery Time 18 ns
Input Capacitance 1.21nF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.8V
Continuous Drain Current (ID) 15A
Turn-Off Delay Time 14 ns
Fall Time (Typ) 4.7 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Rise Time 7.6ns
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 15A Ta 34A Tc
Input Capacitance (Ciss) (Max) @ Vds 1210pF @ 15V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 8.5mOhm @ 15A, 10V
FET Type N-Channel
Turn On Delay Time 12 ns
Power Dissipation 3.1W
Element Configuration Single
Power Dissipation-Max 3.1W Ta
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Resistance 8.5MOhm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2013
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package PQFN (5x6) Single Die
Number of Pins 8
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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