IRFH7194TRPBF
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 11A
PDF
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Buying Options
Total Price: USD $0.69
Unit Price: USD $0.6916
≥1 USD $0.6916
≥10 USD $0.5681
≥100 USD $0.55005
≥500 USD $0.532
≥1000 USD $0.5149
Inventory: 5557
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series FASTIRFET?, HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 17mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 39W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.4m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 3.6V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 733pF @ 50V
Current - Continuous Drain (Id) @ 25°C 11A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 35A
Drain Current-Max (Abs) (ID) 11A
Pulsed Drain Current-Max (IDM) 140A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 220 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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