IRFH7188TRPBF
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
FASTIRFET? HEXFET? Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 18A Ta 105A Tc 105A 3.8W Ta 132W Tc 100V
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series FASTIRFET?, HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 6.6mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.8W Ta 132W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2116pF @ 50V
Current - Continuous Drain (Id) @ 25°C 18A Ta 105A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 105A
Pulsed Drain Current-Max (IDM) 210A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 493 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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