IRFH5306TR2PBF
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 15A 5X6 PQFN
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package PQFN (5x6) Single Die
Technical
Packaging Cut Tape (CT)
Published 2013
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 8.1MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1125pF @ 15V
Current - Continuous Drain (Id) @ 25°C 15A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time 26ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 6.1 ns
Turn-Off Delay Time 9.1 ns
Continuous Drain Current (ID) 44A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.125nF
Recovery Time 26 ns
Drain to Source Resistance 8.1mOhm
Rds On Max 8.1 mΩ
Nominal Vgs 1.8 V
Dimensions
Height 900μm
Length 6mm
Width 5mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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