IRFH5301TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
INFINEON IRFH5301TRPBF MOSFET Transistor, N Channel, 100 A, 30 V, 0.00155 ohm, 10 V, 1.8 VNew
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Buying Options
Total Price: USD $1.06
Unit Price: USD $1.056
≥1 USD $1.056
≥10 USD $0.8624
≥100 USD $0.670824
≥500 USD $0.568586
≥1000 USD $0.463179
≥3000 USD $0.436031
Inventory: 1255
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package PQFN (5x6) Single Die
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.85MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 3.6W Ta 110W Tc
Power Dissipation 110W
Turn On Delay Time 21 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.85mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 5114pF @ 15V
Current - Continuous Drain (Id) @ 25°C 35A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
Rise Time 78ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 5.114nF
Drain to Source Resistance 1.55mOhm
Rds On Max 1.85 mΩ
Nominal Vgs 1.8 V
Dimensions
Height 850μm
Length 6mm
Width 5mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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