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IRFH5250DTR2PBF

Infineon Technologies
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 40A 8VQFN
PDF
/
Buying Options
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥100 USD $0.66025
≥500 USD $0.6384
≥1000 USD $0.6175
Inventory: 1201
Minimum: 1
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Technical Details

Compliance

RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 5mm
Length 5.9944mm
Height 838.2μm

Technical

Nominal Vgs 1.8 V
Rds On Max 1.4 mΩ
Drain to Source Resistance 2.2mOhm
Recovery Time 41 ns
Input Capacitance 706pF
Drain to Source Breakdown Voltage 25V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.8V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 23 ns
Fall Time (Typ) 24 ns
Drain to Source Voltage (Vdss) 25V
Rise Time 72ns
Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 6115pF @ 13V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Rds On (Max) @ Id, Vgs 1.4mOhm @ 50A, 10V
FET Type N-Channel
Turn On Delay Time 23 ns
Power Dissipation 250W
Number of Elements 1
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.6W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2013
Packaging Cut Tape (CT)

Physical

Supplier Device Package 8-PQFN (5x6)
Number of Pins 8
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount

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