Drain to Source Resistance 2.2mOhm
Drain to Source Breakdown Voltage 25V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 23 ns
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 6115pF @ 13V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Rds On (Max) @ Id, Vgs 1.4mOhm @ 50A, 10V
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.6W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)