IRFH5220TRPBF
RoHS
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Package 8-VQFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 3.8A PQFN
PDF
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Buying Options
Total Price: USD $1.45
Unit Price: USD $1.4459
≥1 USD $1.4459
≥10 USD $1.18655
≥100 USD $1.1495
≥500 USD $1.11245
≥1000 USD $1.0754
Inventory: 15984
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VQFN Exposed Pad
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 8.3W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 7.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 99.9m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 50V
Current - Continuous Drain (Id) @ 25°C 3.8A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 4.7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.4 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 3.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.0999Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 47A
Avalanche Energy Rating (Eas) 290 mJ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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