IRFH5215TR2PBF
RoHS
/
Package 8-VQFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 5.0A PQFN
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VQFN Exposed Pad
Number of Pins 8
Supplier Device Package PQFN (5x6)
Technical
Packaging Cut Tape (CT)
Published 2011
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 58MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 6.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 58mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 50V
Current - Continuous Drain (Id) @ 25°C 5A Ta 27A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 6.3ns
Drain to Source Voltage (Vdss) 150V
Fall Time (Typ) 2.9 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Input Capacitance 1.35nF
Recovery Time 60 ns
Drain to Source Resistance 58mOhm
Rds On Max 58 mΩ
Nominal Vgs 5 V
Dimensions
Height 850μm
Length 6mm
Width 5mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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