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IRFH5210TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description INFINEON IRFH5210TRPBF MOSFET Transistor, N Channel, 55 A, 100 V, 0.0126 ohm, 10 V, 4 VNew
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Buying Options
Total Price: USD $0.78
Unit Price: USD $0.779657
≥1 USD $0.779657
≥10 USD $0.705093
≥100 USD $0.663232
≥500 USD $0.616139
≥1000 USD $0.553347
Inventory: 7788
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 5mm
Length 5.9944mm
Height 838.2μm

Technical

Pulsed Drain Current-Max (IDM) 220A
Drain to Source Breakdown Voltage 100V
Drain Current-Max (Abs) (ID) 55A
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 21 ns
Fall Time (Typ) 6.5 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 9.7 ns
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Ta 55A Tc
Input Capacitance (Ciss) (Max) @ Vds 2570pF @ 25V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 14.9m Ω @ 33A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 7.2 ns
Case Connection DRAIN
Power Dissipation 3.6W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.6W Ta 104W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-N5
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series HEXFET?
Published 2011
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 12 Weeks

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