IRFH5204TRPBF
RoHS
/
Package 8-VQFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 22A PQFN
PDF
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Buying Options
Total Price: USD $4.03
Unit Price: USD $4.028
≥1 USD $4.028
≥10 USD $3.30505
≥100 USD $3.2015
≥500 USD $3.09795
≥1000 USD $2.99535
Inventory: 1149
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Technical
Nominal Vgs 4 V
Pulsed Drain Current-Max (IDM) 400A
Drain to Source Breakdown Voltage 40V
Drain-source On Resistance-Max 0.0043Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 22A
Turn-Off Delay Time 18 ns
Fall Time (Typ) 8.3 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 14ns
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Current - Continuous Drain (Id) @ 25°C 22A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 2460pF @ 25V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 4.3m Ω @ 50A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 8.4 ns
Case Connection DRAIN
Power Dissipation 105W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.6W Ta 105W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-N5
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2011
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-VQFN Exposed Pad
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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