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IRFH5204TR2PBF

Infineon Technologies
RoHS
/
Package 8-VQFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 22A PQFN
PDF
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Buying Options
Total Price: USD $1.4
Unit Price: USD $1.39745
≥1 USD $1.39745
≥10 USD $1.14665
≥100 USD $1.1115
≥500 USD $1.0754
≥1000 USD $1.0393
Inventory: 1148
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 5mm
Length 6mm
Height 900μm

Technical

Nominal Vgs 4 V
Rds On Max 4.3 mΩ
Drain to Source Resistance 4.3mOhm
Recovery Time 45 ns
Input Capacitance 2.46nF
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4V
Continuous Drain Current (ID) 22A
Turn-Off Delay Time 18 ns
Fall Time (Typ) 8.3 ns
Drain to Source Voltage (Vdss) 40V
Rise Time 14ns
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Current - Continuous Drain (Id) @ 25°C 22A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 2460pF @ 25V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 4.3mOhm @ 50A, 10V
FET Type N-Channel
Turn On Delay Time 8.4 ns
Power Dissipation 3.6W
Element Configuration Single
Number of Elements 1
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.6W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Resistance 4.3MOhm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2011
Packaging Cut Tape (CT)

Physical

Supplier Device Package PQFN (5x6)
Number of Pins 8
Package / Case 8-VQFN Exposed Pad
Mounting Type Surface Mount
Mount Surface Mount

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