Drain to Source Resistance 4.3mOhm
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 22A
Turn-Off Delay Time 18 ns
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Current - Continuous Drain (Id) @ 25°C 22A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 2460pF @ 25V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 4.3mOhm @ 50A, 10V
Turn On Delay Time 8.4 ns
Element Configuration Single
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.6W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)