IRFH5106TR2PBF
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 100A 5X6 PQFN
PDF
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Buying Options
Total Price: USD $8.31
Unit Price: USD $8.31345
≥1 USD $8.31345
≥10 USD $6.821
≥100 USD $6.6082
≥500 USD $6.39445
≥1000 USD $6.18165
Inventory: 1260
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-PQFN (5x6)
Technical
Packaging Cut Tape (CT)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 114W
Turn On Delay Time 8.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3090pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 9.5 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Input Capacitance 2.46nF
Recovery Time 42 ns
Drain to Source Resistance 5.6mOhm
Rds On Max 4.3 mΩ
Nominal Vgs 4 V
Dimensions
Height 838.2μm
Length 5.9944mm
Width 5mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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