Pulsed Drain Current-Max (IDM) 75A
Drain to Source Breakdown Voltage 100V
Drain Current-Max (Abs) (ID) 9.3A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 9.3mA
Turn-Off Delay Time 18 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9.3A Ta 46A Tc
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 50V
Vgs(th) (Max) @ Id 4.9V @ 100μA
Rds On (Max) @ Id, Vgs 18m Ω @ 9.3A, 10V
Transistor Application SWITCHING
Turn On Delay Time 8.6 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.1W Ta 8.3W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 2 (1 Year)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ