IRFH5020TR2PBF
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 5.1A 8VQFN
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5mm
Length 5.9944mm
Height 838.2μm
Technical
Nominal Vgs 5 V
Rds On Max 55 mΩ
Drain to Source Resistance 55mOhm
Recovery Time 69 ns
Input Capacitance 2.29nF
Drain to Source Breakdown Voltage 200V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 5V
Continuous Drain Current (ID) 43A
Turn-Off Delay Time 21 ns
Fall Time (Typ) 6 ns
Drain to Source Voltage (Vdss) 200V
Rise Time 7.7ns
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.1A Ta
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 100V
Vgs(th) (Max) @ Id 5V @ 150μA
Rds On (Max) @ Id, Vgs 55mOhm @ 7.5A, 10V
FET Type N-Channel
Turn On Delay Time 9.3 ns
Power Dissipation 8.3W
Element Configuration Single
Number of Elements 1
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.6W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Resistance 55MOhm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2013
Packaging Cut Tape (CT)
Physical
Supplier Device Package 8-PQFN (5x6)
Number of Pins 8
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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