IRFH5015TR2PBF
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 10A 8VQFN
PDF
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Buying Options
Total Price: USD $2.49
Unit Price: USD $2.489
≥1 USD $2.489
≥10 USD $2.0425
≥100 USD $1.97885
≥500 USD $1.91425
≥1000 USD $1.8506
Inventory: 1156
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Dimensions
Width 5.15mm
Length 6.1468mm
Height 990.6μm
Technical
Nominal Vgs 5 V
Rds On Max 31 mΩ
Drain to Source Resistance 31mOhm
Recovery Time 78 ns
Input Capacitance 2.3nF
Drain to Source Breakdown Voltage 150V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 5V
Continuous Drain Current (ID) 56A
Turn-Off Delay Time 14 ns
Fall Time (Typ) 3.4 ns
Drain to Source Voltage (Vdss) 150V
Rise Time 9.7ns
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Ta 56A Tc
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 50V
Vgs(th) (Max) @ Id 5V @ 150μA
Rds On (Max) @ Id, Vgs 31mOhm @ 34A, 10V
FET Type N-Channel
Turn On Delay Time 9.4 ns
Power Dissipation 3.6W
Element Configuration Single
Number of Elements 1
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.6W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Resistance 31MOhm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2013
Packaging Cut Tape (CT)
Physical
Supplier Device Package 8-PQFN (5x6)
Number of Pins 8
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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