Drain to Source Resistance 5.9mOhm
Drain to Source Breakdown Voltage 75V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 30 ns
Drain to Source Voltage (Vdss) 75V
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Current - Continuous Drain (Id) @ 25°C 17A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 4290pF @ 25V
Vgs(th) (Max) @ Id 4V @ 150μA
Rds On (Max) @ Id, Vgs 5.9mOhm @ 50A, 10V
Element Configuration Single
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.6W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)