Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 45A
Turn-Off Delay Time 24 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Current - Continuous Drain (Id) @ 25°C 45A Ta
Input Capacitance (Ciss) (Max) @ Vds 4812pF @ 13V
Vgs(th) (Max) @ Id 2.1V @ 100μA
Rds On (Max) @ Id, Vgs 1.35m Ω @ 50A, 10V
Element Configuration Single
Power Dissipation-Max 3.6W Ta 104W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ