IRFBA1405PPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-273AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 174A SUPER-220
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Buying Options
Total Price: USD $102.44
Unit Price: USD $102.43565
≥1 USD $102.43565
≥10 USD $99.1306
≥100 USD $95.8265
≥500 USD $85.91325
Inventory: 1202
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 5mm
Length 10.9982mm
Height 15mm
Technical
Avalanche Energy Rating (Eas) 560 mJ
Pulsed Drain Current-Max (IDM) 680A
Drain to Source Breakdown Voltage 55V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 174A
Turn-Off Delay Time 130 ns
Fall Time (Typ) 110 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 190 ns
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Current - Continuous Drain (Id) @ 25°C 174A Tc
Input Capacitance (Ciss) (Max) @ Vds 5480pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 5m Ω @ 101A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 13 ns
Case Connection DRAIN
Power Dissipation 330W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 330W Tc
Number of Elements 1
Current Rating 174A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 55V
Subcategory FET General Purpose Power
Additional Feature HIGH RELIABILITY
Resistance 5MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?
Published 2002
Packaging Tube
Operating Temperature -40°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-273AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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