IRFBA1404
RoHS
/
Package TO-273AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 206A SUPER-220
PDF
/
Inventory: 5988
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-273AA
Surface Mount NO
Transistor Element Material SILICON
Technical
Packaging Tube
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7m Ω @ 95A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 206A Ta
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 212A
Drain-source On Resistance-Max 0.0035Ohm
Pulsed Drain Current-Max (IDM) 650A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 2000 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
Recommended For You
IRFBA1404+price,IRFBA1404+datasheet,IRFBA1404+in stock,buy+IRFBA1404,finder+IRFBA1404,IRFBA1404+tutorials,IRFBA1404+download