IRFB7546PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Single N-Channel 60 V 7.3 mOhm 87 nC HEXFET? Power Mosfet - TO-220-3
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Buying Options
Total Price: USD $0.71
Unit Price: USD $0.7128
≥1 USD $0.7128
≥10 USD $0.573056
≥100 USD $0.45408
≥500 USD $0.384912
≥1000 USD $0.380706
Inventory: 1109
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series HEXFET?, StrongIRFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 99W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 99W
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.3m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 3.7V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time 51 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 75A
Threshold Voltage 3.7V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Dimensions
Height 16.51mm
Length 10.67mm
Width 4.83mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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