Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 95A
Turn-Off Delay Time 44 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 95A Tc
Input Capacitance (Ciss) (Max) @ Vds 4010pF @ 25V
Vgs(th) (Max) @ Id 3.7V @ 100μA
Rds On (Max) @ Id, Vgs 5.9m Ω @ 57A, 10V
Element Configuration Single
Power Dissipation-Max 125W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HEXFET?, StrongIRFET?
Operating Temperature -55°C~175°C TJ