IRFB7540PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N CH 60V 110A TO-220AB
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Buying Options
Total Price: USD $0.78
Unit Price: USD $0.775733
≥1 USD $0.775733
≥10 USD $0.652767
≥100 USD $0.584743
≥500 USD $0.50887
≥1000 USD $0.408143
Inventory: 1134
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET?, StrongIRFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 160W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.1m Ω @ 65A, 10V
Vgs(th) (Max) @ Id 3.7V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4555pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 76 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 110A
Threshold Voltage 3.7V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 60V
Dimensions
Height 16.51mm
Length 10.67mm
Width 4.83mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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