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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 60V 195A TO-220AB
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Buying Options
Total Price: USD $1.51
Unit Price: USD $1.5136
≥1 USD $1.5136
≥10 USD $1.213872
≥100 USD $0.998712
≥500 USD $0.901666
Inventory: 9410
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC

Dimensions

Width 4.83mm
Length 10.67mm
Height 16.51mm

Technical

Avalanche Energy Rating (Eas) 775 mJ
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 944A
Drain-source On Resistance-Max 0.0024Ohm
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 3.7V
Continuous Drain Current (ID) 195A
Turn-Off Delay Time 118 ns
Fall Time (Typ) 93 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 60V
Rise Time 134 ns
Gate Charge (Qg) (Max) @ Vgs 279nC @ 10V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Input Capacitance (Ciss) (Max) @ Vds 10034pF @ 25V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Rds On (Max) @ Id, Vgs 2.4m Ω @ 100A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 20 ns
Case Connection ISOLATED
Power Dissipation 294W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 294W Tc
Number of Channels 1
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?, StrongIRFET?
Published 2013
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Weight 6.000006g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 12 Weeks

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