Avalanche Energy Rating (Eas) 1025 mJ
Pulsed Drain Current-Max (IDM) 760A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.002Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 195A
Turn-Off Delay Time 172 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 411nC @ 10V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Input Capacitance (Ciss) (Max) @ Vds 13703pF @ 25V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Rds On (Max) @ Id, Vgs 2m Ω @ 100A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 375W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HEXFET?, StrongIRFET?
Operating Temperature -55°C~175°C TJ