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IRFB7437GPBF

Infineon Technologies
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 40V 195A TO220AB
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Rds On Max 2 mΩ
Input Capacitance 7.33nF
Continuous Drain Current (ID) 195A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Input Capacitance (Ciss) (Max) @ Vds 7330pF @ 25V
Vgs(th) (Max) @ Id 3.9V @ 150μA
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Max Power Dissipation 230W
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?, StrongIRFET?
Published 2013
Packaging Tube

Physical

Supplier Device Package TO-220AB
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

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