IRFB7434PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Single N-Channel 40 V 1.6 mOhm 324 nC HEXFET? Power Mosfet - TO-220-3
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Buying Options
Total Price: USD $0.85
Unit Price: USD $0.854222
≥1 USD $0.854222
≥10 USD $0.715558
≥100 USD $0.639685
≥500 USD $0.553347
≥1000 USD $0.515411
≥1000 USD $0.497097
Inventory: 1164
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.83mm
Length 10.67mm
Height 16.51mm
Technical
Nominal Vgs 3 V
Recovery Time 38 ns
Avalanche Energy Rating (Eas) 490 mJ
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 3V
Continuous Drain Current (ID) 195A
Turn-Off Delay Time 115 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Rise Time 68 ns
Gate Charge (Qg) (Max) @ Vgs 324nC @ 10V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Input Capacitance (Ciss) (Max) @ Vds 10820pF @ 25V
Vgs(th) (Max) @ Id 3.9V @ 250μA
Rds On (Max) @ Id, Vgs 1.6m Ω @ 100A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 24 ns
Case Connection DRAIN
Power Dissipation 294W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 294W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 1.6MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?, StrongIRFET?
Published 2012
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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