IRFB7430PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N CH 40V 195A TO220
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Buying Options
Total Price: USD $2.72
Unit Price: USD $2.7192
≥1 USD $2.7192
≥10 USD $2.15336
≥100 USD $1.845712
≥500 USD $1.640654
≥1000 USD $1.404806
≥3000 USD $1.322781
Inventory: 1103
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET?, StrongIRFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Case Connection DRAIN
Turn On Delay Time 32 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 460nC @ 10V
Rise Time 105 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 160 ns
Continuous Drain Current (ID) 195A
Threshold Voltage 2.2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 760 mJ
Recovery Time 52 ns
Dimensions
Height 16.51mm
Length 10.67mm
Width 4.83mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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