IRFB5615PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 35A TO-220AB
PDF
/
Buying Options
Total Price: USD $0.74
Unit Price: USD $0.740413
≥1 USD $0.740413
≥10 USD $0.617447
≥100 USD $0.484016
≥500 USD $0.422532
≥1000 USD $0.385904
Inventory: 969
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Dimensions
Width 4.826mm
Length 10.668mm
Height 9.02mm
Technical
Nominal Vgs 3 V
Recovery Time 120 ns
Drain to Source Breakdown Voltage 150V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 3V
Continuous Drain Current (ID) 35A
Turn-Off Delay Time 17.1 ns
Fall Time (Typ) 13.2 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 23.1 ns
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 50V
Vgs(th) (Max) @ Id 5V @ 100μA
Rds On (Max) @ Id, Vgs 39m Ω @ 21A, 10V
Transistor Application AMPLIFIER
FET Type N-Channel
Turn On Delay Time 8.6 ns
Case Connection DRAIN
Power Dissipation 144W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 144W Tc
Number of Elements 1
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 39MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2006
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
Recommended For You
IRFB5615PBF+price,IRFB5615PBF+datasheet,IRFB5615PBF+in stock,buy+IRFB5615PBF,finder+IRFB5615PBF,IRFB5615PBF+tutorials,IRFB5615PBF+download