Drain to Source Breakdown Voltage 200V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 25A
Turn-Off Delay Time 25.4 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 50V
Vgs(th) (Max) @ Id 5V @ 100μA
Rds On (Max) @ Id, Vgs 72.5m Ω @ 15A, 10V
Transistor Application SWITCHING
Turn On Delay Time 13.4 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 144W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ