IRFB4620PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 25A TO-220AB
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Buying Options
Total Price: USD $1.3
Unit Price: USD $1.301609
≥1 USD $1.301609
≥10 USD $1.200882
≥100 USD $1.138091
≥500 USD $0.949717
≥1000 USD $0.920938
Inventory: 578
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.826mm
Length 10.668mm
Height 9.02mm
Technical
Nominal Vgs 3 V
Dual Supply Voltage 200V
Drain to Source Breakdown Voltage 200V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 3V
Continuous Drain Current (ID) 25A
Turn-Off Delay Time 25.4 ns
Fall Time (Typ) 14.8 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 22.4ns
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 50V
Vgs(th) (Max) @ Id 5V @ 100μA
Rds On (Max) @ Id, Vgs 72.5m Ω @ 15A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 13.4 ns
Power Dissipation 144W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 144W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 72.5MOhm
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?
Published 2008
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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