Drain to Source Breakdown Voltage 150V
Drain Current-Max (Abs) (ID) 75A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 83A
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 85A Tc
Input Capacitance (Ciss) (Max) @ Vds 4460pF @ 50V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 15m Ω @ 33A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 350W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ