IRFB4321GPBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 83A TO-220AB
PDF
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Buying Options
Total Price: USD $1.66
Unit Price: USD $1.65965
≥1 USD $1.65965
≥10 USD $1.36135
≥100 USD $1.31955
≥500 USD $1.2768
≥1000 USD $1.23405
Inventory: 1249
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.826mm
Length 10.668mm
Height 16.51mm
Technical
Nominal Vgs 5 V
Rds On Max 15 mΩ
Drain to Source Resistance 15mOhm
Input Capacitance 4.46nF
Drain to Source Breakdown Voltage 150V
Gate to Source Voltage (Vgs) 30V
Threshold Voltage 5V
Continuous Drain Current (ID) 83A
Turn-Off Delay Time 25 ns
Fall Time (Typ) 35 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 150V
Rise Time 60ns
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 83A Tc
Input Capacitance (Ciss) (Max) @ Vds 4460pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 15mOhm @ 33A, 10V
FET Type N-Channel
Turn On Delay Time 18 ns
Power Dissipation 330W
Element Configuration Single
Power Dissipation-Max 330W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2009
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package TO-220AB
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Alternative Model
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