IRFB4310ZGPBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 120A TO-220AB
PDF
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Buying Options
Total Price: USD $1.8
Unit Price: USD $1.7974
≥1 USD $1.7974
≥10 USD $1.47535
≥100 USD $1.4288
≥500 USD $1.3832
≥1000 USD $1.33665
Inventory: 1166
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Power Dissipation 250W
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6860pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 60ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 6.86nF
Drain to Source Resistance 6mOhm
Rds On Max 6 mΩ
Nominal Vgs 4 V
Dimensions
Height 16.51mm
Length 10.668mm
Width 4.826mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status RoHS Compliant
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