IRFB4310GPBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 130A TO-220AB
PDF
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Buying Options
Total Price: USD $0.68
Unit Price: USD $0.67545
≥1 USD $0.67545
≥10 USD $0.5548
≥100 USD $0.5377
≥500 USD $0.51965
≥1000 USD $0.50255
Inventory: 74829
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC Unknown
Radiation Hardening No
Dimensions
Width 4.826mm
Length 10.668mm
Height 16.51mm
Technical
Nominal Vgs 4 V
Rds On Max 7 mΩ
Drain to Source Resistance 7mOhm
Input Capacitance 7.67nF
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 130A
Turn-Off Delay Time 68 ns
Fall Time (Typ) 78 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Rise Time 110ns
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Input Capacitance (Ciss) (Max) @ Vds 7670pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 7mOhm @ 75A, 10V
FET Type N-Channel
Turn On Delay Time 26 ns
Power Dissipation 300W
Element Configuration Single
Power Dissipation-Max 300W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2008
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package TO-220AB
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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