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IRFB42N20DPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Single N-Channel 200 V 0.055 Ohm 91 nC HEXFET? Power Mosfet - TO-220-3
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Buying Options
Total Price: USD $2.72
Unit Price: USD $2.718336
≥1 USD $2.718336
≥10 USD $2.650312
≥100 USD $2.605835
≥500 USD $2.0653
≥1000 USD $1.9969
Inventory: 18
Minimum: 1
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Technical Details

Compliance

Lead Free Contains Lead, Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.69mm
Length 10.5156mm
Height 15.24mm

Technical

Nominal Vgs 5.5 V
Recovery Time 330 ns
Dual Supply Voltage 200V
Drain to Source Breakdown Voltage 200V
Drain Current-Max (Abs) (ID) 42.6A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Threshold Voltage 5.5V
Continuous Drain Current (ID) 44A
Turn-Off Delay Time 29 ns
Fall Time (Typ) 32 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 69 ns
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Input Capacitance (Ciss) (Max) @ Vds 3430pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Rds On (Max) @ Id, Vgs 55m Ω @ 26A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 18 ns
Case Connection DRAIN
Power Dissipation 300W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.4W Ta 330W Tc
Number of Elements 1
Current Rating 42A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 200V
Subcategory FET General Purpose Power
Resistance 55Ohm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Series HEXFET?
Published 2001
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 12 Weeks

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