Max Junction Temperature (Tj) 175°C
Pulsed Drain Current-Max (IDM) 260A
Drain to Source Breakdown Voltage 200V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 65A
Turn-Off Delay Time 21 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 24m Ω @ 46A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 330W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ