IRFB4215PBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 115A TO-220AB
PDF
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Buying Options
Total Price: USD $7.88
Unit Price: USD $7.8774
≥1 USD $7.8774
≥10 USD $6.4638
≥100 USD $6.26145
≥500 USD $6.06005
≥1000 USD $5.8577
Inventory: 1261
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Technical
Nominal Vgs 4 V
Rds On Max 9 mΩ
Drain to Source Resistance 9mOhm
Input Capacitance 4.08nF
Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 115A
Turn-Off Delay Time 77 ns
Fall Time (Typ) 110 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Rise Time 160ns
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Current - Continuous Drain (Id) @ 25°C 115A Tc
Input Capacitance (Ciss) (Max) @ Vds 4080pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 9mOhm @ 54A, 10V
FET Type N-Channel
Power Dissipation 270W
Element Configuration Single
Power Dissipation-Max 270W Tc
Number of Elements 1
Current Rating 115A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 60V
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Resistance 9Ohm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2010
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package TO-220AB
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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