IRFB4212PBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 18A TO-220AB
PDF
/
Buying Options
Total Price: USD $0.53
Unit Price: USD $0.528694
≥1 USD $0.528694
≥10 USD $0.498762
≥100 USD $0.470532
≥500 USD $0.4439
≥1000 USD $0.418769
Inventory: 1227
Minimum: 1
-
+
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 72.5mOhm
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 18A
Number of Elements 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Turn On Delay Time 7.7 ns
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 72.5m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 50V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 28 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.9 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 57A
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 25 mJ
Recovery Time 62 ns
Nominal Vgs 5 V
Dimensions
Height 9.02mm
Length 10.6426mm
Width 4.82mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
IRFB4212PBF+price,IRFB4212PBF+datasheet,IRFB4212PBF+in stock,buy+IRFB4212PBF,finder+IRFB4212PBF,IRFB4212PBF+tutorials,IRFB4212PBF+download