Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 44A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5380pF @ 50V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 56 ns
Continuous Drain Current (ID) 76A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 250 mJ
Max Junction Temperature (Tj) 175°C