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IRFB4110GPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 120A TO220AB
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Buying Options
Total Price: USD $2.42
Unit Price: USD $2.4168
≥1 USD $2.4168
≥10 USD $1.98265
≥100 USD $1.9209
≥500 USD $1.85915
≥1000 USD $1.7974
Inventory: 207
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC

Dimensions

Width 4.826mm
Length 10.668mm
Height 16.51mm

Technical

Nominal Vgs 4 V
Pulsed Drain Current-Max (IDM) 670A
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.0045Ohm
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 4V
Continuous Drain Current (ID) 180A
Turn-Off Delay Time 78 ns
Fall Time (Typ) 88 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 67 ns
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Input Capacitance (Ciss) (Max) @ Vds 9620pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 4.5m Ω @ 75A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 25 ns
Case Connection DRAIN
Power Dissipation 370W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 370W Tc
Number of Elements 1
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Series HEXFET?
Published 2007
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 10 Weeks

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