Max Junction Temperature (Tj) 175°C
Drain to Source Breakdown Voltage 150V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 17A
Turn-Off Delay Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 50V
Vgs(th) (Max) @ Id 4.9V @ 50μA
Rds On (Max) @ Id, Vgs 95m Ω @ 10A, 10V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 80W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ