IRFB3607GPBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 80A TO220AB
PDF
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Buying Options
Total Price: USD $0.78
Unit Price: USD $0.77615
≥1 USD $0.77615
≥10 USD $0.63745
≥100 USD $0.6175
≥500 USD $0.59755
≥1000 USD $0.5776
Inventory: 53491
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 4.826mm
Length 10.668mm
Height 16.51mm
Technical
Rds On Max 9 mΩ
Drain to Source Resistance 9mOhm
Input Capacitance 3.07nF
Drain to Source Breakdown Voltage 75V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Turn-Off Delay Time 43 ns
Fall Time (Typ) 96 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 75V
Rise Time 110ns
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 3070pF @ 50V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 9mOhm @ 46A, 10V
FET Type N-Channel
Turn On Delay Time 16 ns
Power Dissipation 140W
Element Configuration Single
Power Dissipation-Max 140W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2010
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package TO-220AB
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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