IRFB3507PBF
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 97A TO-220AB
PDF
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Buying Options
Total Price: USD $0.97
Unit Price: USD $0.9671
≥1 USD $0.9671
≥10 USD $0.79325
≥100 USD $0.76855
≥500 USD $0.74385
≥1000 USD $0.71915
Inventory: 104433
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 75V
Technology MOSFET (Metal Oxide)
Current Rating 97A
Number of Elements 1
Power Dissipation-Max 190W Tc
Power Dissipation 190W
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.8mOhm @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3540pF @ 50V
Rds On Max 8.8 mΩ
Drain to Source Resistance 7mOhm
Input Capacitance 3.54nF
Drain to Source Breakdown Voltage 75V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 97A
Turn-Off Delay Time 52 ns
Fall Time (Typ) 49 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 75V
Rise Time 81ns
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Current - Continuous Drain (Id) @ 25°C 97A Tc
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Alternative Model
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