Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 4V
Continuous Drain Current (ID) 75A
Turn-Off Delay Time 55 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 48V
Vgs(th) (Max) @ Id 4V @ 150μA
Rds On (Max) @ Id, Vgs 3.4m Ω @ 75A, 10V
Power Dissipation-Max 300W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ