IRFB3077GPBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 120A TO-220AB
PDF
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Buying Options
Total Price: USD $1.52
Unit Price: USD $1.52095
≥1 USD $1.52095
≥10 USD $1.2483
≥100 USD $1.20935
≥500 USD $1.1704
≥1000 USD $1.13145
Inventory: 14982
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 370W Tc
Element Configuration Single
Power Dissipation 370W
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Rise Time 87ns
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 95 ns
Turn-Off Delay Time 69 ns
Nominal Vgs 4 V
Rds On Max 3.3 mΩ
Drain to Source Resistance 3.3mOhm
Input Capacitance 9.4nF
Drain to Source Breakdown Voltage 75V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4V
Continuous Drain Current (ID) 210A
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.826mm
Length 10.668mm
Height 16.51mm
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