IRFB3006PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 195A TO-220AB
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Buying Options
Total Price: USD $3.64
Unit Price: USD $3.6432
≥1 USD $3.6432
≥10 USD $2.890096
≥100 USD $2.4772
≥500 USD $2.201954
≥1000 USD $1.885418
≥3000 USD $1.775321
Inventory: 1101
Minimum: 1
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Technical Details
Technical
Packaging Tube
Operating Temperature -55°C~175°C TJ
Avalanche Energy Rating (Eas) 320 mJ
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.0025Ohm
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 3V
Continuous Drain Current (ID) 270A
Turn-Off Delay Time 118 ns
Fall Time (Typ) 189 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 182 ns
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Input Capacitance (Ciss) (Max) @ Vds 8970pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 2.5m Ω @ 170A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 16 ns
Case Connection DRAIN
Power Dissipation 375W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 375W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?
Published 2008
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.826mm
Length 10.668mm
Height 9.02mm
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