IRFB3004PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 195A TO-220AB
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Buying Options
Total Price: USD $3.97
Unit Price: USD $3.9688
≥1 USD $3.9688
≥10 USD $3.33344
≥100 USD $2.696672
≥500 USD $2.39705
≥1000 USD $2.052477
≥3000 USD $1.93263
Inventory: 540
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.826mm
Length 10.668mm
Height 9.017mm
Technical
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 4V
Continuous Drain Current (ID) 340A
Turn-Off Delay Time 90 ns
Fall Time (Typ) 130 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 220 ns
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 1.75m Ω @ 195A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 23 ns
Case Connection DRAIN
Power Dissipation 380W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 380W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Resistance 1.75MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?
Published 2008
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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